Electron transport in rectifying semiconductor alloy ramp heterostructures
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx1/16/2677/00081615.pdf?arnumber=81615
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2. Comparative study of the differential resistance of GaAs- and GaN-based laser diodes;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2016-07
3. Broadband and high-sensitivity terahertz-wave detection using Fermi-level managed barrier diode;SPIE Proceedings;2016-05-10
4. Differential resistance of GaN-based laser diodes with and without polarization effect;Applied Optics;2015-10-07
5. InP-Based Unipolar Heterostructure Diode for Vertical Integration, Level Shifting, and Small Signal Rectification;IEICE Transactions on Electronics;2010
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