InP-Based Unipolar Heterostructure Diode for Vertical Integration, Level Shifting, and Small Signal Rectification
Author:
Affiliation:
1. University Duisburg-Essen, Center for Semiconductor Technology and Optoelectronics
2. Fraunhofer-Institute for Microelectronic Circuits and Systems (IMS)
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://www.jstage.jst.go.jp/article/transele/E93.C/8/E93.C_8_1309/_pdf
Reference12 articles.
1. [1] C.L. Allyn, A.C. Gossard, and W. Wiegmann, “New rectifying semiconductor structure by molecular beam epitaxy,” Appl. Phys. Lett., vol.36, no.5, pp.373-375, 1990.
2. Electron transport in rectifying semiconductor alloy ramp heterostructures
3. Nonlinear Electron Transport in an Asymmetric Microjunction: A Ballistic Rectifier
4. [4] J. Mateos, B.G. Vasallo, D. Pardo, and T. Gonzalez, “Operation and high-frequency performance of nanoscale unipolar rectifying diodes,” Appl. Phy. Lett., vol.86, no.21, 212103, 2005.
5. New rectifying semiconductor structure by molecular beam epitaxy
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