A Perspective on the Theory of MOSFET Scaling and its Impact-Reference-Cited by-同舟云学术

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A Perspective on the Theory of MOSFET Scaling and its Impact

Published:2007 Issue:1 Volume:12 Page:27-30
ISSN:1098-4232
Container-title:IEEE Solid-State Circuits Newsletter
language:
Short-container-title:IEEE Solid-State Circuits Newsl.

Author:

Ning Tak H.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

General Medicine

Link

http://xplorestaging.ieee.org/ielx5/4563671/4785527/04785538.pdf?arnumber=4785538

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. InAs Raised Buried Oxide SOI-TFET with N-type Si_1-xGe_x Pocket for Low-Power Applications;Nanoelectronic Devices and Applications;2024-06-26

2. A survey of leakage reduction techniques in CMOS digital circuits for nanoscale regime;Australian Journal of Electrical and Electronics Engineering;2021-08-22

3. Energy and time determine scaling in biological and computer designs;Philosophical Transactions of the Royal Society B: Biological Sciences;2016-08-19

4. Single-walled carbon nanotubes for high-performance electronics;Nanoscale;2013

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