Radiation Induced Charge Trapping in Sputtered <formula formulatype="inline"><tex Notation="TeX">${\rm ZrO}_{\rm 2} \!\! : \!\! {\rm N}$</tex></formula> Dielectric Thin Films on Silicon-Reference-Cited by-同舟云学术

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Radiation Induced Charge Trapping in Sputtered ${\rm ZrO}_{\rm 2} \!\! : \!\! {\rm N}$ Dielectric Thin Films on Silicon

Published:2014-08 Issue:4 Volume:61 Page:2397-2401
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Rao Ashwath,D'sa Joyline,Goyal Saurabh,Singh B. R.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx7/23/6878509/06862067.pdf?arnumber=6862067

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of power on the physical and electrical properties of magnetron sputtered gadolinium oxide thin films for MOS capacitors;Materials Science in Semiconductor Processing;2021-01

2. A Tunneling Current Model with a Realistic Barrier for Ultra-Thin High-k Dielectric ZrO2 Material Based MOS Devices;Silicon;2017-12-27

3. Influence of Image Force Effect on Tunneling Current Density for High-k Material ZrO₂ Ultra Thin Films Based MOS Devices;Journal of Nanoelectronics and Optoelectronics;2017-01-01

4. Effects of biased irradiation on charge trapping in HfO2 dielectric thin films;AIP Conference Proceedings;2017

5. Total Ionizing Dose Response of Hafnium-Oxide Based MOS Devices to Low-Dose-Rate Gamma Ray Radiation Observed by Pulse CV and On-Site Measurements;IEEE Transactions on Nuclear Science;2017-01

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