A two-layer magneto-TLM contact resistance model: application to modulation-doped FET structures-Reference-Cited by-同舟云学术

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A two-layer magneto-TLM contact resistance model: application to modulation-doped FET structures

Published:1988-02 Issue:2 Volume:35 Page:133-138
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Look D.C.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/16/147/00002431.pdf?arnumber=2431

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Evaluation of Electrical Contact in Thin Semiconducting Films From AC Measurements;IEEE Journal of the Electron Devices Society;2016-07

3. Coupling resistance between n-type surface accumulation layer and p-type bulk in InN:Mg thin films;Applied Physics Letters;2012-02-20

4. Transverse magnetoresistance of metal interfaces with Hg1−xCdxTe;Journal of Applied Physics;1999-05

5. Electrical properties of PdGe ohmic contacts to GaAs/AlxGa1−xAs heterostructures at liquid helium temperature;Applied Physics Letters;1998-06

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