Coupling resistance between n-type surface accumulation layer and p-type bulk in InN:Mg thin films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3680102
Reference10 articles.
1. When group-III nitrides go infrared: New properties and perspectives
2. Intrinsic Electron Accumulation at Clean InN Surfaces
3. Evidence forp-Type Doping of InN
4. Mg-doped InN and InGaN – Photoluminescence, capacitance–voltage and thermopower measurements
5. PN junction rectification in electrolyte gated Mg-doped InN
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