Reliability and Variability-Aware DTCO Flow: Demonstration of Projections to N3 FinFET and Nanosheet Technologies

Author:

Rzepa G.,Karner M.,Baumgartner O.,Strof G.,Schanovsky F.,Mitterbauer F.,Kernstock C.,Karner H.W.,Weckx P.,Hellings G.,Claes D.,Wu Z.,Xiang Y.,Chiarella T.,Parvais B.,Mitard J.,Franco J.,Kaczer B.,Linten D.,Stanojevic Z.

Publisher

IEEE

Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. DTCO of Nanosheet and Forksheet Architectures: Exploring Dielectric Walls, Contacting Schemes, and Active Regions for Optimized RO Performance;2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2024-03-03

2. An Efficient and Accurate DTCO Simulation Framework for Reliability and Variability-Aware Explorations of FinFETs, Nanosheets, and Beyond;2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2024-03-03

3. Multi-VT Options at Scaled Vertical Pitch in Gate-All-Around Nanosheet Devices by Independent Inner-Outer Work-function Tuning;2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2024-03-03

4. Physics-Informed Compact Model for SF6/O2 Plasma Etching;2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD);2023-09-27

5. A Comparative Study on Front-Side, Buried and Back-Side Power Rail Topologies in 3nm Technology Node;2023 IEEE/ACM International Symposium on Low Power Electronics and Design (ISLPED);2023-08-07

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