Reliability and Failure Analysis of 100 nm AlGaN/GaN HEMTs under DC and RF Stress-Reference-Cited by-同舟云学术

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Reliability and Failure Analysis of 100 nm AlGaN/GaN HEMTs under DC and RF Stress

Published:2021-03 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE International Reliability Physics Symposium (IRPS)
language:
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Author:

Dammann M.,Baeumler M.,Kemmer T.,Konstanzer H.,Bruckner P.,Krause S.,Graff A.,Simon-Najasek M.

Funder

European Defense Agency (EDA)

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9405068/9405088/09405227.pdf?arnumber=9405227

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical and Small-Signal Characteristics Degradation of RF GaN HEMTs Under Repetitive ESD Stresses;IEEE Transactions on Electron Devices;2024-08

2. Novel approach of combined planar and cross-sectional defect analysis of stressed normally-on HEMT devices with leaky Schottky gates;Microelectronics Reliability;2023-11

3. Failure Physics and Reliability of GaN‐Based HEMTs for Microwave and Millimeter‐Wave Applications: A Review of Consolidated Data and Recent Results;physica status solidi (a);2022-11-19

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