Novel approach of combined planar and cross-sectional defect analysis of stressed normally-on HEMT devices with leaky Schottky gates-Reference-Cited by-同舟云学术

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Novel approach of combined planar and cross-sectional defect analysis of stressed normally-on HEMT devices with leaky Schottky gates

Published:2023-11 Issue: Volume:150 Page:115096
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Graff A.,Simon-Najasek M.,Hübner S.,Lejoyeux M.,Altmann F.,Gao V. Zhan,Rampazzo F.,Meneghini M.,Zanoni E.,Lambert B.

Funder

Electronic Components and Systems for European Leadership

Horizon 2020

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. GaN Transistors for Efficient Power Conversion;Lidow,2019

2. High Frequency GaN HEMTs for RF MMIC Applications;Micovic,2016

3. GaN-based high-electron mobility transistors for high-power and high-frequency application: a review;Murugapandiyan,2020

4. Degradation mechanism of 0.15μm AlGaN/GAN HEMTs: effect of hot electron;Gao;Microelectron. Reliab.,2020

5. Reliability Physics of GaN HEMT Microwave Devices: The Age of Scaling;Zanoni,2020

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