Charge pumping source-drain current for gate oxide interface trap density in MOSFETs and LDMOS
Author:
Publisher
IEEE
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http://xplorestaging.ieee.org/ielx7/9405068/9405088/09405229.pdf?arnumber=9405229
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Comparison of Si and SiC MOSFETs responses to electrical stress and the observation of parameter recovery in SiC MOSFET by stress superposition;Engineering Research Express;2024-08-06
2. Open volume defect accumulation with irradiation in GaN, GaP, InAs, InP, Si, ZnO, and MgO;Journal of Applied Physics;2023-12-08
3. Defect Passivation and Reliability Enhancement by Low-Temperature-High-Pressure Hydrogenation in LDMOS With 0.13-μm Bipolar-CMOS-DMOS Technology;IEEE Electron Device Letters;2023-05
4. Studies of AC BTI Stress in 4H SiC MOSFETs;2021 IEEE International Integrated Reliability Workshop (IIRW);2021-10-04
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