The properties, effect and extraction of localized defect profiles from degraded FET characteristics-Reference-Cited by-同舟云学术

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The properties, effect and extraction of localized defect profiles from degraded FET characteristics

Published:2021-03 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE International Reliability Physics Symposium (IRPS)
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Author:

Vandemaele Michiel,Kaczer Ben,Tyaginov Stanislav,Franco Jacopo,Degraeve Robin,Chasin Adrian,Wu Zhicheng,Bury Erik,Xiang Yang,Mertens Hans,Groeseneken Guido

Funder

Research Foundation - Flanders

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9405068/9405088/09405164.pdf?arnumber=9405164

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An In-Depth Study of Ring Oscillator Reliability under Accelerated Degradation and Annealing to Unveil Integrated Circuit Usage;Micromachines;2024-06-08

2. Towards Complete Recovery of Circuit Degradation by Annealing With On-Chip Heaters;IEEE Electron Device Letters;2023-02

3. Dedicated ICs for the Characterization of Variability and Aging Studies and their Use in Lightweight Security Applications : Invited paper;2022 IEEE Latin American Electron Devices Conference (LAEDC);2022-07-04

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