Electrical Characterization of Ω-Gate Nanowire MOSFETs Down to Cryogenic Temperatures
Author:
Affiliation:
1. Centro Universitário FEI,Electrical Engineering Department,São Bernardo do Campo,Brazil
2. Université Grenoble Alpe,CEA-Leti,Grenoble,France
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10302454/10302463/10302573.pdf?arnumber=10302573
Reference12 articles.
1. Performance of Omega-Shaped-Gate Silicon Nanowire MOSFET With Diameter Down to 8 nm
2. Cryo-CMOS Circuits and Systems for Quantum Computing Applications
3. Low temperature characterization of mobility in 14nm FD-SOI CMOS devices under interface coupling conditions
4. A review of recent MOSFET threshold voltage extraction methods;ortiz-conde;Microelectron Reliab,2002
5. Junctionless nanowire transistors operation at temperatures down to 4.2 K
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