Author:
Shin Minju,Shi Ming,Mouis Mireille,Cros Antoine,Josse Emmanuel,Kim Gyu-Tae,Ghibaudo Gérard
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference21 articles.
1. Grenouillet L, Vinet M, Gimbert J, Giraud B, Noel JP, Liu Q, et al. UTBB FDSOI transistors with dual STI for a multi-VT strategy at 20nm node and below. 2012 Int Electron Dev Meet, IEEE; 2012. p. 3.6.1–4.
2. Bias-engineered mobility in advanced FD-SOI MOSFETs;Fernandez;IEEE Electron Dev Lett,2013
3. Impact of back-gate biasing on effective field and mobility in ultrathin silicon-on-insulator metal–oxide–semiconductor field-effect-transistors;Ohata;J Appl Phys,2013
4. Liu Q, Vinet M, Gimbert J, Loubet N, Wacquez R, Grenouillet L, et al. High performance UTBB FDSOI devices featuring 20nm gate length for 14nm node and beyond. 2013 IEEE Int Electron Dev Meet 2013:9.2.1–4.
5. Low temperature characterization of 14nm FDSOI CMOS devices;Shin;11th Int Work Low Temp Electron, IEEE,2014
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