Reduced reverse narrow channel effect in thin SOI nMOSFETs-Reference-Cited by-同舟云学术

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Reduced reverse narrow channel effect in thin SOI nMOSFETs

Published:2000-09 Issue:9 Volume:21 Page:460-462
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Chun-Yen Chang ,Sun-Jay Chang ,Tien-Sheng Chao ,Sung-Dtr Wu ,Tiao-Yuan Huang

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/18702/00863111.pdf?arnumber=863111

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Scaling effects;Fully Depleted Silicon-On-insulator;2021

2. A new microfluidic pressure-controlled Field Effect Transistor (pFET) in digital fluidic switch operation mode;Microelectronic Engineering;2018-04

3. On the Origin of Gate-Induced Floating-Body Effect in PD SOI p-MOSFETs;IEEE Electron Device Letters;2011-07

4. Deep submicron PDSOI thermal resistance extraction;Journal of Semiconductors;2010-09

5. Short channel effect in deep submicron PDSOI nMOSFETs;Journal of Semiconductors;2010-01

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