Silicon-carbide MESFET-based 400/spl deg/C MEMS sensing and data telemetry
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Instrumentation
Link
http://xplorestaging.ieee.org/ielx5/7361/32684/01532282.pdf?arnumber=1532282
Cited by 22 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. High-Temperature Wireless Sensor Platform Powered by Energy Scavenging;IEEE Open Journal of Industry Applications;2024
2. 4H-Silicon Carbide as an Acoustic Material for MEMS;IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control;2023-10
3. A 500 °C Active Down-Conversion Mixer in Silicon Carbide Bipolar Technology;IEEE Electron Device Letters;2018-06
4. RF MEMS Inductors and Their Applications—A Review;Journal of Microelectromechanical Systems;2017-02
5. Modeling and Simulation of a Pressure Sensing Solution Based on Silicon Carbide for Harsh Environment Applications;2014 UKSim-AMSS 16th International Conference on Computer Modelling and Simulation;2014-03
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