Demonstration of an 1200V/20A 4H-SiC Multi-Step Trenched Junction Barrier Schottky Diode
Author:
Affiliation:
1. Hubei Jiufengshan Laboratory,Dept of Integrated Power Systems and Device Technology,WUHAN,China,430206
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10070854/10070925/10071062.pdf?arnumber=10071062
Reference9 articles.
1. Optimized Design of 4H-SiC Multi-Trenched Junction Barrier Schottky Diodes;yuan;12th National Semiconductor Discrete Device Annual Conference,2018
2. Advanced Power Rectifier Concepts
3. 4H-SiC Trench Structure Schottky Diodes
4. Annealing induced extended defects in as-grown and ion-implanted 4H–SiC epitaxial layers
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. High- Temperature Characterization of a Novel Junction Barrier Schottky Diode with Multi-Step Trenched Structure;2024 IEEE 7th International Electrical and Energy Conference (CIEEC);2024-05-10
2. Recent advancements in continuously scalable conversion-ratio switched-capacitor converter;Journal of Semiconductors;2024-04-01
3. A Direct 24- to 1-V Multilevel Multiphase Hybrid Buck Converter With Automatic V CF Balancing and Current Sharing Mechanism;IEEE Journal of Emerging and Selected Topics in Power Electronics;2023-12
4. A 36–55 V Input 0.6–2.5 V Output Bypass-Assist Series-Capacitor Power Converter With 93.1% Peak Efficiency and 1.5 mA–5 A Load Range;IEEE Transactions on Circuits and Systems I: Regular Papers;2023-12
5. Downscaled Representation Matters: Improving Image Rescaling with Collaborative Downscaled Images;2023 IEEE/CVF International Conference on Computer Vision (ICCV);2023-10-01
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3