Quasi-Vertical GaN Schottky Barrier Diode on Sapphire Substrate With 10<sup>9</sup> High ION/IOFF and Excellent Forward Performance-Reference-Cited by-同舟云学术

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Quasi-Vertical GaN Schottky Barrier Diode on Sapphire Substrate With 10⁹ High ION/IOFF and Excellent Forward Performance

Published:2023-11-27 Issue: Volume: Page:208-210
ISSN:
Container-title:2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)
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Author:

Wu Zhiyong¹,Ma Qun¹,Fu Song¹,Wang Liangchen¹,Li Jinmin¹,Wang Junxi¹,Liu Zhiqiang¹,Yi Xiaoyan¹

Affiliation:

1. Institute of Semiconductors,Research and Development Center for Solid State Lighting, Chinese Academy of Sciences,Beijing,China,100083

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10399638/10399484/10399732.pdf?arnumber=10399732

Reference22 articles.

1. Semiconductors for high‐voltage, vertical channel field‐effect transistors

2. Effects of Gate Field Plates on the Surface State Related Current Collapse in AlGaN/GaN HEMTs

3. Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate With 1010 High On/Off Current Ratio and Low Specific On-Resistance

4. 1.48 MV⋅cmˉ¹/0.2 mΩ⋅cm² GaN Quasi-Vertical Schottky Diode via Oxygen Plasma Termination

5. Review of the Recent Progress on GaN-Based Vertical Power Schottky Barrier Diodes (SBDs)

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