Study of Poly-Si Gate Annealing on the Electrical Characteristics of 1200 V 4H-SiC MOSFETs
Author:
Affiliation:
1. State Key Laboratory of Advanced Power Transmission Technology, Beijing Institute of Smart Energy,Beijing,People's Republic of China,102209
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10399638/10399484/10399758.pdf?arnumber=10399758
Reference14 articles.
1. Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV
2. Fabrication of SiO2/4H-SiC (0001) interface with nearly ideal capacitance-voltage characteristics by thermal oxidation
3. A study on N2O direct oxidation process with re-oxidation annealing for the improvement of interface properties in 4H-SiC MOS capacitor
4. Effect of nitric oxide annealing on the interface trap density near the conduction bandedge of 4H–SiC at the oxide/(112̄0) 4H–SiC interface
5. SiO2/4H-SiC interface doping during post-deposition-annealing of the oxide in N2O or POCl3
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