An Improved Composite JTE Termination Technique for Ultrahigh Voltage 4H-SiC Power Devices-Reference-Cited by-同舟云学术

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An Improved Composite JTE Termination Technique for Ultrahigh Voltage 4H-SiC Power Devices

Published:2019-11 Issue: Volume: Page:
ISSN:
Container-title:2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)
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Author:

Hu Rui,Deng Xiaochuan,Xu XiaoJie,Li Xuan,Li Juntao,Li Zhiqiang,Zhang Yourun,Zhang Bo

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9005308/9019749/09019794.pdf?arnumber=9019794

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Multi-Step junction termination extension design and simulation study for 4H-SiC Schottky barrier diode;Results in Physics;2024-07

2. A review of the etched terminal structure of a 4H-SiC PiN diode;Journal of Semiconductors;2023-11-01

3. Failure Analysis and Reliability Improvement of the Corner Region of Variation Lateral Doping Termination;2021 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA);2021-09-15

4. Design, Fabrication and Characterization of 6.5kV/100A 4H-SiC PiN power rectifier;2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia);2021-08-25

5. Design, Fabrication and Characterization of 10kV/100A 4H-SiC PiN Power Rectifier;Materials Science Forum;2020-11

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