Thickness and Resistivity Study of AlN Thin Film on Silicon Wafer Prepared by Reactive HiPIMS-Reference-Cited by-同舟云学术

Thickness and Resistivity Study of AlN Thin Film on Silicon Wafer Prepared by Reactive HiPIMS

Published:2023-09-26 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE International Conference on Sensors and Nanotechnology (SENNANO)
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Author:

Azman Zulkifli¹,Sahari Norain²,Abu Bakar Ahmad Shuhaimi³,Omar Mohd Azwadi⁴,Mohamed Ahmad Nasrull⁴,Palapa Wijaya Yusmar⁵,Ahmad Mohd Yazid⁶,Nayan Nafarizal⁴

Affiliation:

1. Universiti Tun Hussein Onn Malaysia,Faculty of Electrical and Electronic Engineering,Batu Pahat,Malaysia

2. Universiti Tun Hussein Onn Malaysia,Faculty of Engineering Technology,Pagoh,Malaysia

3. Universiti Malaya,Low Dimensional Material Reserch Centre,Kuala Lumpur,Malaysia

4. Universiti Tun Hussein Onn Malaysia,Microelectronics and Nanotechnology-Shamsuddin Research Centre,Batu Pahat,Malaysia

5. Politeknik Caltex Riau,Department of Electronic System Engineering,Pekanbaru,Indonesia

6. Nanorian Technologies Sdn Bhd,Kajang,Malaysia

Funder

Ministry of Higher Education

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10352513/10352514/10352564.pdf?arnumber=10352564

Reference17 articles.

1. Reactive Sputtering of Aluminum Nitride (002) Thin Films for Piezoelectric Applications: A Review

2. Glancing Angle Deposition and Growth Mechanism of Inclined AlN Nanostructures Using Reactive Magnetron Sputtering

3. Optimal target sputtering mode for aluminum nitride thin film deposition by high power pulsed magnetron sputtering

4. MOCVD of AlN on epitaxial graphene at extreme temperatures

5. Step-flow growth of Al droplet free AlN epilayers grown by plasma assisted molecular beam epitaxy