A 4.2-9.2GHz Cryogenic Transformer Feedback Low Noise Amplifier with 4.5K Noise Temperature and Noise-Power Matching in 22nm CMOS FDSOI
Author:
Affiliation:
1. School of ECE, Georgia Tech,USA
2. CryoElec LLC,USA
3. Carbonics Inc,USA
4. Alcatera Inc,USA
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9862947/9862948/09863208.pdf?arnumber=9863208
Reference9 articles.
1. A Cryogenic Broadband Sub-1-dB NF CMOS Low Noise Amplifier for Quantum Applications
2. In-depth Cryogenic Characterization of 22 nm FDSOI Technology for Quantum Computation
3. A 1.2 V Reactive-Feedback 3.1-10.6 GHz Ultrawideband Low-Noise Amplifier in 0.13 um CMOS
4. Wideband LNA Noise Matching
5. Characterization and Analysis of On-Chip Microwave Passive Components at Cryogenic Temperatures
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2. A Study on the Characteristics of C-Band Broadband Amplifier with High Sensitivity and Low Noise;2024 IEEE International Conference on Computational Electromagnetics (ICCEM);2024-04-15
3. A 4-to-6-GHz Cryogenic CMOS LNA With 4.4-K Average Noise Temperature in 22-nm FDSOI;IEEE Microwave and Wireless Technology Letters;2024-04
4. A 0.32×0.12 mm2 Cryogenic BiCMOS 0.1–8.8 GHz Low Noise Amplifier Achieving 4 K Noise Temperature for SNWD Readout;IEEE Transactions on Microwave Theory and Techniques;2024-04
5. 29.3 A Cryo-CMOS Receiver with 15K Noise Temperature Achieving 9.8dB SNR in 10μs Integration Time for Spin Qubit Readout;2024 IEEE International Solid-State Circuits Conference (ISSCC);2024-02-18
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