Impact of Cell Layout on On-state and Dynamic Characteristics of N-channel SiC IGBTs
Author:
Affiliation:
1. Research & Development Group Hitachi, Ltd.,Center for Technology Innovation–Electrification,Tokyo,Japan,185-8601
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9813543/9813532/09813599.pdf?arnumber=9813599
Reference8 articles.
1. 20 kV 4H-SiC N-IGBTs
2. Low Vf and highly reliable 16 kV ultrahigh voltage SiC flip-type n-channel implantation and epitaxial IGBT;yonezawa;Proc IEDM,2013
3. 22 kV, 1 cm2, 4H-SiC n-IGBTs with improved conductivity modulation
4. Dynamic characteristics of large current capacity module using 16-kV ultrahigh voltage SiC flip-type n-channel IE-IGBT
5. 6.5 kV n-Channel 4H-SiC IGBT with Low Switching Loss Achieved by Extremely Thin Drift Layer
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1. The optimisation, fabrication and comparison of 10 kV-rated 4H-SiC IGBTs and MOSFETs;2023 IEEE Energy Conversion Congress and Exposition (ECCE);2023-10-29
2. Mechanism of Maximum-Current Limitation for 10-kV SiC-IGBT Module by Analyzing Surge Current Test Result;IEEE Transactions on Electron Devices;2023-10
3. Power Loss Reduction of N-Channel 10-kV SiC IGBTs With Box Cell Layout;IEEE Transactions on Electron Devices;2023-07
4. A New Cell Topology for 4H-SiC Planar Power MOSFETs for High-Frequency Switching;Materials;2022-09-27
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