Terminal Breakdown Voltage Degradation by Avalanche Stress Induced Hot-Hole Injection in Split Gate Trench Power MOSFET-Reference-Cited by-同舟云学术

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Terminal Breakdown Voltage Degradation by Avalanche Stress Induced Hot-Hole Injection in Split Gate Trench Power MOSFET

Published:2022-05-22 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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Author:

Fang Dong¹,Lin Zhiyu¹,Xiao Kui²,Qiao Ming¹,Bian Zheng²,Liu Wenliang¹,Yang Guang¹,Ye Jun³,Zhang Sen²,Zhang Bo¹

Affiliation:

1. University of Electronic Science and Technology of China,State Key Laboratory of Electronic Thin Films and Integrated Devices,Chengdu,P.R. China

2. CSMC Technologies Co. Ltd,Technology Development IV,Wuxi,P.R. China

3. Power Device Business Group,China Resources Microelectronics Limited,Wuxi,P.R. China

Funder

National Natural Science Foundation of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9813543/9813532/09813651.pdf?arnumber=9813651

Reference11 articles.

1. Shield Gate Trench MOSFET With Narrow Gate Architecture and Low-k Dielectric Layer

2. Model and Experiments of Small-Size Vertical Devices With Field Plate

3. Breakdown voltage instability mechanism and improving ruggedness in Trench Field Plate Power MOSFET

4. Process & design impact on BVDSS stability of a shielded gate trench power MOSFET;hossain;Proc Int Symp Power Semiconductor Devices and IC s,2014

5. Modeling of time dependent breakdown voltage degradation in Trench Field Plate Power MOSFET

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