Modeling of time dependent breakdown voltage degradation in Trench Field Plate Power MOSFET
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Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/7981281/7988866/07988879.pdf?arnumber=7988879
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Investigation of BVdss instability in trench power MOSFET through DLTS, electrical characterization and TCAD simulations;2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2023-05-28
2. Impact of Field-Plate Insulating Layer on Junction Breakdown Instability in OFT-Pw.MOSFET Devices;IEEE Transactions on Electron Devices;2022-07
3. Terminal Breakdown Voltage Degradation by Avalanche Stress Induced Hot-Hole Injection in Split Gate Trench Power MOSFET;2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2022-05-22
4. Improvement of Q rr-I DSS and dynamic avalanche of field-plate MOSFET by local lifetime control on the cathode side;Japanese Journal of Applied Physics;2021-12-07
5. Breakdown Voltage Instability Mechanism on the Field Limiting Rings Edge Termination of Buried Layer Rectifier;IEEE Journal of Emerging and Selected Topics in Power Electronics;2021
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