Wafer-scale Fabrication of Vertical GaN p-n Diodes with Graded JTE Structures Using Multiple-zone Boron Implantation
Author:
Affiliation:
1. National Institute of Advanced Industrial Science and Technology,Advanced Power Electronics Research Center,Tsukuba, Ibaraki,Japan
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9813543/9813532/09813654.pdf?arnumber=9813654
Reference9 articles.
1. Implantation-and etching-free high voltage vertical GaN p–n diodes terminated by plasma-hydrogenated p-GaN: revealing the role of thermal annealing
2. Photon-Enhanced Conductivity Modulation and Surge Current Capability in Vertical GaN Power Rectifiers
3. A New JTE Technique for Vertical GaN Power Devices by Conductivity Control Using Boron Implantation into p-Type Layer
4. Hydrogen-Modulated Step Graded Junction Termination Extension in GaN Vertical p-n Diodes
5. 1 kV/1.3 m?cm2 vertical GaN-on-GaN Schottky barrier diodes with high switching performance;yang;ISPSD,2018
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Boron-Implanted Termination Structures for Vertical GaN Power Devices with Highly Enhanced Breakdown Voltage;IEEJ Transactions on Electronics, Information and Systems;2024-03-01
2. 1.2-kV Vertical GaN PIN Rectifier With Ion-Implanted Floating Guard Rings;IEEE Transactions on Electron Devices;2023-09
3. A Novel Junction Termination Technique with Excellent Cost-Performance and Extraordinary Anti-Charge-Deviation Ability;2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2023-05-28
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