First Integration of 10-V CMOS Logic Circuit, 20-V Gate Driver, and 600-V VDMOSFET on a 4H-SiC Single Chip
Author:
Affiliation:
1. National Yang Ming Chiao Tung University,Institute of Electronics,Taiwan,R.O.C,30010
Funder
Ministry of Science and Technology
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9813543/9813532/09813677.pdf?arnumber=9813677
Reference11 articles.
1. A SiC CMOS Digitally Controlled PWM Generator for High-Temperature Applications
2. High Temperature Digital and Analogue Integrated Circuits in Silicon Carbide
3. A Study on the Isolation Ability of LOCal Oxidation of SiC (LOCOSiC) for 4H-SiC CMOS Process
4. An Integrated SiC CMOS Gate Driver for Power Module Integration
5. Dual Gate Oxide CMOS Process on 4H-SiC
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2. A Study on the Impact of Gamma Rays Irradiation on 4H-SiC CMOSFETs;2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia);2023-08-27
3. Integrated Lateral SBD Temperature Sensor of a 4H-SiC VDMOS for Real-Time Temperature Monitoring;IEEE Transactions on Electron Devices;2023-07
4. Bias-Induced Instability of 4H-SiC CMOS;Materials Science Forum;2023-06-06
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