A Study on the Impact of Gamma Rays Irradiation on 4H-SiC CMOSFETs
Author:
Affiliation:
1. National Yang Ming Chiao Tung University,Institute of Electronics,Hsinchu,Taiwan,R.O.C.
2. National Tsing Hua University,Nuclear Science and Technology Development Center (NSTDC),Hsinchu,Taiwan,R.O.C.
Funder
National Science and Technology Council
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10261884/10261892/10261927.pdf?arnumber=10261927
Reference10 articles.
1. First Demonstration of a Monolithic SiC Power IC Integrating a Vertical MOSFET with a CMOS Gate Buffer
2. Experimental study of total ionizing dose effect on SiC MOSFETs at temperature from −233 °C to 175 °C
3. Dual Gate Oxide CMOS Process on 4H-SiC
4. Ionizing radiation effects in MOS devices and circuits;ma;Wiley,1996
5. Threshold displacement energies and displacement cascades in 4H-SiC: Molecular dynamic simulations
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1. Improving Radiation Hardness of 4H-SiC Power Devices by Local-Oxidation of Silicon Carbide (LOCOSiC) Isolation;IEEE Electron Device Letters;2024-02
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