Ultra-high Voltage BCD Technology Integrated 1000 V 3-D Split-Superjunction devices
Author:
Affiliation:
1. CSMC Technologies Corporation,Technology Development Department,Wuxi,P. R. China
2. Southeast University,Nanjing,P. R. China
3. University of Electronic Science and Technology of China,Chengdu,P. R. China
Funder
National Natural Science Foundation of China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9813543/9813532/09813681.pdf?arnumber=9813681
Reference15 articles.
1. 700V Lateral DMOS with New Source Fingertip Design
2. A new 800 V lateral MOSFET with dual conduction paths
3. Analytical Design and Experimental Verification of Lateral Superjunction Based on Global Region Normalization Method
4. Novel Self-Modulated Lateral Superjunction Device Suppressing the Inherent 3-D JFET Effect
5. Optimization and Experiments of Lateral Semi-Superjunction Device Based on Normalized Current-Carrying Capability
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