Experiments of A Novel 600V SOI-LIGBT with Parallelly Discrete Cells for Amperage-Class Current Integration-Reference-Cited by-同舟云学术

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Experiments of A Novel 600V SOI-LIGBT with Parallelly Discrete Cells for Amperage-Class Current Integration

Published:2024-06-02 Issue: Volume: Page:434-437
ISSN:
Container-title:2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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Author:

He Nailong¹,Liu Teng²,Wu Qiyi³,Song Hua²,Mu Jiangnan³,Zhang Sen²,Zhang Long¹,Liu Siyang¹,Sun Weifeng¹

Affiliation:

1. National ASIC System Engineering Research Center, Southeast University,Nanjing,P. R. China

2. CSMC Technologies Corporation,Technology Development Department,Wuxi,P. R. China

3. University of Electronic Science and Technology of China,State Key Laboratory of Electronic Thin Films and Integrated Devices,Chengdu,China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10579539/10579462/10579616.pdf?arnumber=10579616

Reference12 articles.

1. A Novel Silicon-on-Insulator Lateral Insulated-Gate Bipolar Transistor With Dual Trenches for Three-Phase Single Chip Inverter ICs

2. Improvement in lateral IGBT design for 500 V 3 A one chip inverter ICs

3. Low loss IGBT with Partially Narrow Mesa Structure (PNM-IGBT)

4. Electrical Characteristic Study of an SOI-LIGBT With Segmented Trenches in the Anode Region

5. A high current density SOI-LIGBT with Segmented Trenches in the Anode region for suppressing negative differential resistance regime

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