Single Bit Upsets versus Burst Errors of Stacked-Capacitor DRAMs Induced by High-Energy Neutron - SECDED is No Longer Effective --Reference-Cited by-同舟云学术

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Single Bit Upsets versus Burst Errors of Stacked-Capacitor DRAMs Induced by High-Energy Neutron - SECDED is No Longer Effective -

Published:2022-10-03 Issue: Volume:11 Page:1-4
ISSN:
Container-title:2022 22nd European Conference on Radiation and Its Effects on Components and Systems (RADECS)
language:
Short-container-title:

Author:

Kamibayashi Motoki¹,Kobayashi Kazutoshi¹,Hashimoto Masanori²

Affiliation:

1. Kyoto Institute of Technology,Department of Electronics,Japan

2. Kyoto University,Department of Comm. and Comp. Eng.,Japan

Funder

Experiment

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10412245/10412349/10412354.pdf?arnumber=10412354

Reference10 articles.

1. DUO: Exposing On-Chip Redundancy to Rank-Level ECC for High Reliability

2. A 1.1-V 10-nm Class 6.4-Gb/s/Pin 16-Gb DDR5 SDRAM With a Phase Rotator-ILO DLL, High-Speed SerDes, and DFE/FFE Equalization Scheme for Rx/Tx

3. Soft error study on DDR4 SDRAMs using a 480 MeV proton beam

4. Alpha-particle-induced soft errors in dynamic memories

5. Soft error trends and mitigation techniques in memory devices

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