Trap trajectories and the cutoff of dissipative effects in semiconductors-Reference-Cited by-同舟云学术

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Trap trajectories and the cutoff of dissipative effects in semiconductors

Published:1983-02-28 Issue:2 Volume:26 Page:176-181
ISSN:0038-5670
Container-title:Soviet Physics Uspekhi
language:
Short-container-title:Sov. Phys. Usp.

Author:

Levinson I B

Publisher

IOP Publishing

Link

http://stacks.iop.org/0038-5670/26/i=2/a=R05/pdf

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mechanism of population inversion in uniaxially strainedp-Ge continuous-wave lasers;Physical Review B;2000-12-15

2. Population Inversion Induced by Resonant States in Semiconductors;Physical Review Letters;1999-07-19

3. Germanium lasers in the range from far-infra red to millimetre waves;Optical and Quantum Electronics;1991

4. Remarkable effects of uniaxial stress on the far-infrared laser emission inp-type Ge;Physical Review B;1988-07-15

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