Remarkable effects of uniaxial stress on the far-infrared laser emission inp-type Ge
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.38.1274/fulltext
Reference24 articles.
1. Evidence for induced far‐infrared emission fromp‐Ge in crossed electric and magnetic fields
2. Far-Infrared Laser Oscillation in p-Ge Using External Reflectors
3. Polarization of the far‐infrared laser oscillation inp‐Ge in Faraday configuration
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1. Far-infrared laser oscillation from a very small p-Ge crystal under uniaxial stress;Applied Physics Letters;1999-06-07
2. Absorption and population inversion in p-type InGaAs strained layers based on intervalence subband transition at FIR frequencies;Infrared Physics & Technology;1995-01
3. Influence of impurity absorption on germanium hot-hole laser spectra;Semiconductor Science and Technology;1994-05-01
4. Observation of two emission lines in the p-type-Ge cyclotron resonance laser;IEEE Journal of Quantum Electronics;1994
5. Continuous Wavelength Tuning of Inter-Valence-Band Laser Oscillation in p-Type Germanium Over Range of 80-120 µm;Japanese Journal of Applied Physics;1993-11-15
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