THE AVALANCHE-TRANSIT DIODE AND ITS USE IN MICROWAVES-Reference-Cited by-同舟云学术

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THE AVALANCHE-TRANSIT DIODE AND ITS USE IN MICROWAVES

Published:1967-06-30 Issue:6 Volume:9 Page:892-912
ISSN:0038-5670
Container-title:Soviet Physics Uspekhi
language:
Short-container-title:Sov. Phys. Usp.

Author:

Tager A S

Publisher

IOP Publishing

Link

http://stacks.iop.org/0038-5670/9/i=6/a=A07/pdf

Cited by 32 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Brief history of THz and IR technologies;Semiconductor Physics, Quantum Electronics & Optoelectronics;2019-03-30

2. Barrier-injection transit-time diodes and transistors for terahertz generation and detection;International Conference on Micro- and Nano-Electronics 2018;2019-03-15

3. Brief history of THz and IR technologies;SEMICOND PHYS QUANT;2019

4. Transit-time diodes and transistors with variable injection for generation and detection of THz radiation;ITM Web of Conferences;2019

5. Analytic Model of Transit-Time Diodes and Transistors for the Generation and Detection of THz Radiation;Russian Microelectronics;2018-09

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