Analytic Model of Transit-Time Diodes and Transistors for the Generation and Detection of THz Radiation-Reference-Cited by-同舟云学术

Analytic Model of Transit-Time Diodes and Transistors for the Generation and Detection of THz Radiation

Published:2018-09 Issue:5 Volume:47 Page:290-298
ISSN:1063-7397
Container-title:Russian Microelectronics
language:en
Short-container-title:Russ Microelectron

Author:

Vyurkov V. V.,Khabutdinov R. R.,Nemtsov A. B.,Semenikhin I. A.,Rudenko M. K.,Rudenko K. V.,Lukichev V. F.

Publisher

Pleiades Publishing Ltd

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063739718050104.pdf

Reference15 articles.

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2. Fedichkin, L. and V’yurkov, V., Quantum ballistic channel as an ultrahigh frequency generator. Appl. Phys. Lett., 1994, vol. 64, pp. 2535–2536.

3. Pilgun, A., Vyurkov, V., Fedichkin, L., Borzdov, V., and Orlikovsky, A., Terahertz oscillations from nanowires, in Proceedings of the International Conference on Micro- and Nanoelectronics, Zvenigorod, Russia, October 2012, p. P1–09.

4. Vyurkov, V., Svintsov, D., Pilgun, A., and Orlikovsky, A., Nanowire transit-time diodes for terahertz generation, in Proceedings of the 4th Russia-Japan-USA Symposium on Fundamental and Applied Problems of Terahertz Devices and Technologies (RJUS TeraTech-2015). Chernogolovka, Russia, 2015, pp. 58–59.

5. Khabutdinov, R., Semenikhin, I., Davydov, F., Vyurkov, V., Fedichkin, L., Rudenko, K., Borzdov, A.V., and Borzdov, V.M., Low-dimensional transit-time diodes for terahertz generation. Proc. SPIE, 2016, vol. 10224, p. 102240M.

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1. Barrier-injection transit-time diodes and transistors for terahertz generation and detection;International Conference on Micro- and Nano-Electronics 2018;2019-03-15

2. Transit-time diodes and transistors with variable injection for generation and detection of THz radiation;ITM Web of Conferences;2019