Study of multimode semiconductor lasers with buried mesas
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Published:2019-12-01
Issue:12
Volume:49
Page:1172-1174
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ISSN:1063-7818
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Container-title:Quantum Electronics
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language:
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Short-container-title:Quantum Electron.
Author:
Shamakhov V.V.,Nikolaev D.N.,Golovin V.S.,Veselov D.A.,Slipchenko S.O.,Pikhtin N.A.
Abstract
Abstract
A buried-mesa AlGaAs/GaAs/GaInAs laser heterostructure emitting at a wavelength of 1050 nm is formed on a GaAs substrate by MOCVD. Mesa-stripe laser diodes with an aperture of 100 μm based on the obtained heterostructure are fabricated and studied. The internal optical losses of the laser diodes are 2.4 cm−1. The output powers in both directions achieved at a cavity length of 2900 μm in the cw and pulsed regimes were 2.1 and 23 W, respectively.
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Statistical and Nonlinear Physics,Electronic, Optical and Magnetic Materials
Cited by
1 articles.
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