Modification of the Drain Current on a Metal-Oxide-Semiconductor Field-Effect Transistor with Ferrite Gate Oxide-Reference-Cited by-同舟云学术

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Modification of the Drain Current on a Metal-Oxide-Semiconductor Field-Effect Transistor with Ferrite Gate Oxide

Published:2006 Issue:2 Volume:30 Page:61-64
ISSN:0285-0192
Container-title:Journal of the Magnetics Society of Japan
language:
Short-container-title:J. Magn. Soc. Jpn.

Author:

Wakiya N.,Wada H.,Shimizu K.,Mizukami S.,Machi M.,Mizutani N.,Shinozaki K.

Publisher

The Magnetics Society of Japan

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. Magnetic sensitivity of a MAGFET of uniform channel current density

2. Analysis of an n-channel MOSFET magnetic sensor with non-uniform impurity profile

3. Measurement of Hall mobility in n-channel silicon inversion layer

4. Si MAGFETs optimized for sensitivity and noise properties

5. Orientation Control and Properties of Pb(Zr, Ti)O3Thin Films Deposited on Ni–Zn-Ferrite for Novel Ferroelectric/Ferromagnetic Memory Applications

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