Author:
Briglio D. R.,Nathan A.,Baltes H. P
Abstract
The Hall mobility of electrons in silicon inversion layers is determined from measurements of the magnetic-field sensitivity of dual-drain n-channel metal oxide semiconductor transistors and comparison with numerical device-modeling results. The variation of the Hall mobility with bias conditions is discussed.
Publisher
Canadian Science Publishing
Subject
General Physics and Astronomy
Cited by
11 articles.
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