Fabrication of SiGe quantum devices by electron-beam induced damage-Reference-Cited by-同舟云学术

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Fabrication of SiGe quantum devices by electron-beam induced damage

Published:1997-01 Issue:1 Volume:21 Page:29-36
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Ryan Joseph M.,Broers Alec N.,Paul Douglas J.,Pepper Michael,Whall Terry E.,Fernández Juan M.,Joyce Bruce A.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electroacoustic conversion in modulation-doped SiGe∕Si heterostructures;Low Temperature Physics;2008-01

2. EBIC of Strained Si/SiGe 2DEGs Showing Lateral Electron Confinement;Solid State Phenomena;1998-12

3. Investigations of electron-beam and optical induced damage in high mobility SiGe heterostructures;Solid-State Electronics;1997-10

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