Tailoring InAs/Ga1-xInxSb superlattices for long-wavelength IR applications
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Type II superlattice infrared photodetector research at Fraunhofer IAF;Infrared Technology and Applications XLIV;2018-05-23
2. Development of bi-spectral InAs/GaSb type II superlattice image detectors;SPIE Proceedings;2014-06-24
3. Theoretical investigation of InAs/GaSb type-II pin superlattice infrared detector in the mid wavelength infrared range;Journal of Applied Physics;2013-02-28
4. InAs/InAsSb strain balanced superlattices for optical detectors: Material properties and energy band simulations;Journal of Applied Physics;2012-02
5. Molecular beam epitaxy growth and characterization of type-II InAs/GaSb strained layer superlattices for long-wave infrared detection;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2010-05
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