Stokes shift in one-side modulation-n-doped-strained GaxIn1−xAs/InP asymmetric quantum well
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference38 articles.
1. Electron concentrations and mobilities in selectively doped AlGaAs-GaAs-AlGaAs double heterostructures
2. Influence of an undoped (AlGa)As spacer on mobility enhancement in GaAs‐(AlGa)As superlattices
3. Strong effects of carrier concentration on the Fermi-edge singularity in modulation-doped InP/InxGa1−xAs heterostructures
4. Dimensionality dependence of the band-gap renormalization in two- and three-dimensional electron-hole plasmas in GaAs
5. Properties of the two‐dimensional electron gas in modulation‐doped GaInAs(P)/InP structures grown by low‐pressure metalorganic vapor‐phase epitaxy
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