Radiation characteristics of injection lasers based on vertically coupled quantum dots-Reference-Cited by-同舟云学术

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Radiation characteristics of injection lasers based on vertically coupled quantum dots

Published:1997-06 Issue:4 Volume:21 Page:559-564
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Zaitsev S.V.,Gordeev N.Yu.,Sherniakov Yu.M.,Ustinov V.M.,Zhukov A.E.,Egorov A.Yu.,Maximov M.V.,Kop'ev P.S.,Alferov Zh.I.,Ledentsov N.N.,Kirstaedter N.,Bimberg D.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Anomalous photoluminescence of InAs quantum dots implanted by Mn ions;Physica E: Low-dimensional Systems and Nanostructures;2007-02

2. Electrical and optical properties of InAs/GaAs quantum dots doped by high energy Mn implantation;Acta Physica Sinica;2007

3. Growth of high optical quality InAs quantum dots in InAlGaAs∕InP double heterostructures;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2005

4. Temperature stabilized 1.55 μm photoluminescence in InAs quantum dots grown on InAlGaAs/InP;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2004

5. Copyright Page;Quantum Dot Lasers;2003-08-21

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