Electrical and optical properties of InAs/GaAs quantum dots doped by high energy Mn implantation
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Published:2007
Issue:8
Volume:56
Page:4930
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ISSN:1000-3290
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Container-title:Acta Physica Sinica
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language:
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Short-container-title:Acta Phys. Sin.
Author:
Hu Liang-Jun ,Chen Yong-Hai ,Ye Xiao-Ling ,Wang Zhan-Guo ,
Abstract
V+ were implanted into anantase films by metal ion implantation. The electronic band structures of TiO2 films doped with V+ were calculated using a self-consistent full-potential linearized augmented plane-wave method with
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy