First Principle Calculation of the Geometrical and Electronic Structure of Impurity-Doped β-FeSi2 Semiconductors-Reference-Cited by-同舟云学术

First Principle Calculation of the Geometrical and Electronic Structure of Impurity-Doped β-FeSi2 Semiconductors

Published:2002-01 Issue:1 Volume:163 Page:248-252
ISSN:0022-4596
Container-title:Journal of Solid State Chemistry
language:en
Short-container-title:Journal of Solid State Chemistry

Author:

Tani Jun-ichi,Kido Hiroyasu

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Physical and Theoretical Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. CRC Handbook of Thermoelectrics;Rowe,1995

2. Mechanism of Electrical Conduction in β-FeSi2

3. Study of Semiconductor-to-Metal Transition in Mn-Doped FeSi2

4. Semiconducting and Thermoelectric Properties of Sintered Iron Disilicide

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