Implications of atomic-level manipulation on the Si(100) surface: From enhanced CMOS reliability to molecular nanoelectronics
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference16 articles.
1. Nanoscale patterning and oxidation of H‐passivated Si(100)‐2×1 surfaces with an ultrahigh vacuum scanning tunneling microscope
2. Atomic-Scale Desorption Through Electronic and Vibrational Excitation Mechanisms
3. STM-induced H atom desorption from Si(100): isotope effects and site selectivity
4. Cryogenic UHV-STM Study of Hydrogen and Deuterium Desorption from Si(100)
5. Reduction of hot electron degradation in metal oxide semiconductor transistors by deuterium processing
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