STM and DFT Investigations of Isolated Porphyrin on a Silicon-Based Semiconductor at Room Temperature-Reference-Cited by-同舟云学术

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STM and DFT Investigations of Isolated Porphyrin on a Silicon-Based Semiconductor at Room Temperature

Published:2009-12-21 Issue:18 Volume:10 Page:3190-3193
ISSN:1439-4235
Container-title:ChemPhysChem
language:en
Short-container-title:ChemPhysChem

Author:

El Garah Mohamed,Makoudi Younes,Palmino Frank,Duverger Eric,Sonnet Philippe,Chaput Laurent,Gourdon Andre,Cherioux Frederic

Publisher

Wiley

Subject

Physical and Theoretical Chemistry,Atomic and Molecular Physics, and Optics

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/cphc.200900523/fullpdf

Reference36 articles.

1. Fully Conjugated Porphyrin Tapes with Electronic Absorption Bands That Reach into Infrared

2. Engineering atomic and molecular nanostructures at surfaces

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1. Structure, Properties, and Reactivity of Porphyrins on Surfaces and Nanostructures with Periodic DFT Calculations;Applied Sciences;2020-01-21

2. Supramolecular self-assembly on the B-Si(111)-(√3x√3) R30° surface: From single molecules to multicomponent networks;Surface Science Reports;2017-09

3. From Models of Hemoproteins to Self-Assembled Molecular Wires;ChemPlusChem;2017-01-16

4. Identification of Surface Defects and Subsurface Dopants in a Delta-Doped System Using Simultaneous nc-AFM/STM and DFT;The Journal of Physical Chemistry C;2014-07-11

5. Conformational adaptation of 2H-Tetraphenylporphyrin at Fe/Si(100) interface during metalation;Journal of Materials Research and Technology;2014-01

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