Identification of Surface Defects and Subsurface Dopants in a Delta-Doped System Using Simultaneous nc-AFM/STM and DFT-Reference-Cited by-同舟云学术

Identification of Surface Defects and Subsurface Dopants in a Delta-Doped System Using Simultaneous nc-AFM/STM and DFT

Published:2014-07-11 Issue:29 Volume:118 Page:15744-15753
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Spadafora E. J.¹,Berger J.¹²,Mutombo P.¹,Telychko M.¹,Švec M.¹,Majzik Z.¹,McLean A. B.³,Jelínek P.¹⁴

Affiliation:

1. Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnická 10, CZ-16200 Prague, Czech Republic

2. Department of Physical Electronics, Faculty of Nuclear Sciences and Physical Engineering, Czech Technical University in Prague, Břehová 7, CZ-11519 Prague, Czech Republic

3. Department of Physics, Engineering Physics and Astronomy, Queen’s University, Kingston, Ontario K7L 3N6, Canada

4. Graduate School of Engineering, Osaka University 2-1, Yamada-Oka, Suita, Osaka 565-0871, Japan

Funder

Natural Sciences and Engineering Research Council of Canada

Czech Science Foundation

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp503410j

Reference62 articles.

1. Delta doping in silicon

2. Formation of Si(111)-B and Si epitaxy on Si(111)-B: LEED-AES study

3. Structure of boron enriched Si(111) surfaces investigated by Auger, LEED and scanning tunneling microscopy

4. reconstruction along the (111) face of highly boron-doped Si upon vacuum annealing

5. Electronic structure of Si(111)-B(√3 × √3 )R30° studied by Si 2pand B 1score-level photoelectron spectroscopy

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