Effects of Gas Velocity on Deposition Rate and Amount of Cluster Incorporation into a-Si:H Films Fabricated by SiH<sub>4 </sub>Plasma Chemical Vapor Deposition-Reference-Cited by-同舟云学术

Effects of Gas Velocity on Deposition Rate and Amount of Cluster Incorporation into a-Si:H Films Fabricated by SiH₄Plasma Chemical Vapor Deposition

Published:2018-06-25 Issue:0 Volume:13 Page:1406082-1406082
ISSN:1880-6821
Container-title:Plasma and Fusion Research
language:en
Short-container-title:Plasma and Fusion Research

Author:

KOJIMA Takashi¹,TOKO Susumu¹,TANAKA Kazuma¹,SEO Hyunwoong¹,ITAGAKI Naho¹,KOGA Kazunori¹,SHIRATANI Masaharu¹

Affiliation:

1. Department of Electronics, Kyushu University

Publisher

Japan Society of Plasma Science and Nuclear Fusion Research

Subject

Condensed Matter Physics

Link

https://www.jstage.jst.go.jp/article/pfr/13/0/13_1406082/_pdf

Reference31 articles.

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4. [4] J. Perrin, J. Non-Cryst. Solids 137, 639 (1991).

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