NIR Light-Emitting Devices Based on Ligand-Crosslinked CuInS2/ZnS Quantum Dot Emissive Layer

Abstract

Near-infrared (NIR) light-emitting components have gained attention for applications in sensing, communication, lighting, healthcare, and security. Colloidal CuInS2/ZnS quantum dots, composed of environmentally-friendly elements, are promising as active materials for NIR light-emitting devices. While the solution processibility of colloidal quantum dots allows for cost-effective film formation, it can also result in film dissolution when subsequent solution processes are performed to deposit upper functional layers during device fabrication. In this study, we demonstrate the effectiveness of ligand crosslinking in CuInS2/ZnS quantum dots, providing chemical tolerance to the film during subsequent solution processes. This enables the development of solution-based NIR light-emitting diodes, overcoming the film dissolution issue. Our findings open new possibilities for cost-effective fabrication of NIR devices using colloidal quantum dots.