Correlations between Electrical Properties and Process Parameters of Silicon Nitride Films Prepared by Low Temperature (100℃) Catalytic CVD
Author:
Publisher
Korean Ceramic Society
Subject
Ceramics and Composites
Link
http://www.jkcs.or.kr/upload/pdf/SRMHB8_2015_v52n3_209.pdf
Reference12 articles.
1. Vacuum thermally evaporated polymeric zinc acrylate as an organic interlayer of organic/inorganic multilayer passivation for flexible organic thin-film transistors
2. Self-Aligned Bottom-Gate In—Ga—Zn—O Thin-Film Transistor With Source/Drain Regions Formed by Direct Deposition of Fluorinated Silicon Nitride
3. Various applications of silicon nitride by catalytic chemical vapor deposition for coating, passivation and insulating films
4. a‐Si : H produced by high‐temperature thermal decomposition of silane
5. Advantage of plasma-less deposition in Cat-CVD to the performance of electronic devices
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1. (Invited) Catalytic Chemical Vapor Deposition Technology for Low Temperature Processing of Thin Film Transistors;ECS Transactions;2018-07-23
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