Advantage of plasma-less deposition in Cat-CVD to the performance of electronic devices-Reference-Cited by-同舟云学术

Advantage of plasma-less deposition in Cat-CVD to the performance of electronic devices

Published:2011-05 Issue:14 Volume:519 Page:4568-4570
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Matsumura Hideki,Hasegawa Tomoaki,Nishizaki Shogo,Ohdaira Keisuke

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference6 articles.

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2. AlGaN/GaN MIS-HFETs with f/sub T/ of 163 GHz using cat-CVD SiN gate-insulating and passivation Layers

3. Semiconductor Devices – Physics and Technology;Sze,2001

4. K. Ohdaira, M. Miyamoto, K. Koyama, and H. Matsumura, Proc. of 35th Photovoltaic Specialists Conference, Hawai'i, U.S.A., June 20–25, 2010 (in press).

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